Speaker
Description
Konstantin O. Petrosyants1, Igor A. Kharitonov1, Maksim V. Kozhukhov1, Aleksandr D. Pershin2
1 Moscow Institute of Electronics and Mathematics of
National Research University Higher School of Economics Moscow, Russia,
2 Limited Liability Company "InnoCenter VAO", Moscow, Russia
GaN solid state power amplifiers are important components for wireless power transfer in mobile communication base transceiver stations, radar systems, wireless charging devices and many other applications. The increase in power density in electronic devices has led to a large rise in heat flux, thereby requiring effective thermal management of them . To provide the GaN High Electron Mobility Transistor (HEMT) device junction temperature below 175…180◦C, it is important to realize an appropriate thermal analysis and management strategy.
he paper presents the results of thermal distribution measurements in GaN HEMT IC constructions and their application for their digital twins development.
Temperature measurements were carried out using a infrared Flir camera with 17 mkm macro Lenz at a constant room temperature and the different electrical biases: gate-source voltages Vgs, drain currents Id and dissipated powers Pdiss for the HEMTs.
The following solid state power amplifier chips were analyzed: one –stage amplifier IC chip with GaN HEMT (Pdiss=15 W), two-stage amplifier IC chips with the different circuit realizations and dissipated powers (Pdiss= 43W and 60 W). The channel length was 4 mkm for all the HEMTs.
The maximum temperature (Tmax) and thermal resistance (Rth) values of GaN HEMT were:
- for one –stage amplifiers IC chip - Tmax=74°C, Rth=2,11 °C/W;
- for two-stages amplifier IC chips - Tmax=110°C, (Pdiss= 43W), Rth=1,15 °C/W,
Tmax=170°C, (Pdiss= 62W), Rth=1,5 °C/W.
The maximal temperature value Tmax=170°C is not far from the higher temperature limit for GaN HEMT. So the recommendation was formulated to enhance cooling conditions for the chip with Tmax=170°C.
The IR measurement results mentioned above were used for electro-thermal TCAD and SPICE models development and calibration for further GaN IC chips more detailed investigations.
